Intel Busts Out of the Gate With 3D Transistor

Intel has reported a major technological breakthrough in microprocessor development: the world's first 3D transistor. The Tri-Gate transistor will continue the steady delivery of computing products that are ever more powerful, ever cheaper and ever smaller, the company said. What Intel has done is reinvent the transistor structure by using a a thin three-dimensional silicon fin that rises up vertically from the silicon substrate.

Source: http://www.technewsworld.com/rsstory/72387.html

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